Title:	Single-Electron Devices and Circuits in Silicon
Authors:	Khan Durrani, Zahid Ali
Keywords:	Single-Electron Devices and Circuits in Silicon
Issue Date:	2010
Publisher:	Springer
Description:	Single-electron devices provide a means to control electronic charge at the level of one electron, by means of the single-electron charging or ‘Coulomb blockade’ effect. These devices operate by controlling the transfer of charge across tunnel barriers onto nanometre-scale conducting regions or ‘islands’. In such a process, the energy needed to charge an island with even one electron can be large enough to influence the tunnelling process. This energy, the ‘single-electron charging energy’, must be overcome to allow current to flow across the island, preventing current flow at low applied voltage and temperature.
URI:	http://10.6.20.12:80/handle/123456789/76566
ISBN:	978-1-84816-413-0
Appears in Collections:	Chemistry

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