Single-Electron Devices and Circuits in Silicon

Please use this identifier to cite or link to this item: 192.168.6.56/handle/123456789/76566

Full metadata record

DC Field	Value	Language
dc.contributor.author	Khan Durrani, Zahid Ali	-
dc.date.accessioned	2019-07-24T09:48:43Z	-
dc.date.available	2019-07-24T09:48:43Z	-
dc.date.issued	2010	-
dc.identifier.isbn	978-1-84816-413-0	-
dc.identifier.uri	http://10.6.20.12:80/handle/123456789/76566	-
dc.description	Single-electron devices provide a means to control electronic charge at the level of one electron, by means of the single-electron charging or ‘Coulomb blockade’ effect. These devices operate by controlling the transfer of charge across tunnel barriers onto nanometre-scale conducting regions or ‘islands’. In such a process, the energy needed to charge an island with even one electron can be large enough to influence the tunnelling process. This energy, the ‘single-electron charging energy’, must be overcome to allow current to flow across the island, preventing current flow at low applied voltage and temperature.	en
dc.language	en	en
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	Single-Electron Devices and Circuits in Silicon	en_US
dc.title	Single-Electron Devices and Circuits in Silicon	en_US
dc.type	Book	en_US
Appears in Collections:	Chemistry

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