Please use this identifier to cite or link to this item: 192.168.6.56/handle/123456789/76211
Title: Ferroelectric-Gate Field Effect Transistor Memories
Authors: Park, Byung-Eun
Keywords: Ferroelectric-Gate
Issue Date: 2016
Publisher: Springer
URI: http://10.6.20.12:80/handle/123456789/76211
ISBN: 978-94-024-0841-6
Appears in Collections:Physics

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